IndiumV3, Russie, Analysis, bibRecord, 000B40

Study of polish material removal by electrochemical method on different compound semiconductors

Identifieur interne : 000B40 ( Russie/Analysis ); précédent : 000B39; suivant : 000B41

Study of polish material removal by electrochemical method on different compound semiconductors

Auteurs : RBID : Pascal:01-0043280

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Traitement surface, Gravure électrochimique, Surface, Rugosité, Caractéristique courant tension, Matériau semiconducteur, Gravure sélective, Gallium arséniure, Semiconducteur III-V, Indium phosphure, Morphologie, Formation motif, SEM, Electrolyte, 8165C, GaAs, As Ga, InP, In P.

English descriptors

KwdEn :
- Electrochemical etching, Electrolytes, Experimental study, Gallium arsenides, III-V semiconductors, IV characteristic, Indium phosphides, Morphology, Patterning, Roughness, SEM, Selective etching, Semiconductor materials, Surface treatments, Surfaces.

Abstract

The electrochemical layer removal is widely used in the processing of semiconductors. The surface remaining after the layer removal is generally rough. Under certain conditions, this layer removal may be selective and results in the development of dislocation while, under other conditions, the selectivity decreases and the surface remains smooth after the electrochemical etching. In our present work, we compared the surface characteristics of GaAs and InP after electrochemical layer removal using different electrolytes. The investigation of the surface was carried out using scanning electron microscopy and α-step profiling equipment. In order to compare the surface roughness, we introduced a so-called roughness number. The surface morphology was investigated from the point of view of pattern formation.

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Pascal:01-0043280

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Study of polish material removal by electrochemical method on different compound semiconductors</title>
<author><name sortKey="Nemcsics, A" uniqKey="Nemcsics A">A. Nemcsics</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O.B. 49</s1>
<s2>1525 Budapest</s2>
<s3>HUN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Hongrie</country>
<placeName><settlement type="city">Budapest</settlement>
<region nuts="2">Hongrie centrale</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Dobos, L" uniqKey="Dobos L">L. Dobos</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O.B. 49</s1>
<s2>1525 Budapest</s2>
<s3>HUN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Hongrie</country>
<placeName><settlement type="city">Budapest</settlement>
<region nuts="2">Hongrie centrale</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="David, L" uniqKey="David L">L. David</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Microelectronics and Technology, Kandó Kálmán Politechnic</s1>
<s3>RUS</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>Institute of Microelectronics and Technology, Kandó Kálmán Politechnic</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">01-0043280</idno>
<date when="2000">2000</date>
<idno type="stanalyst">PASCAL 01-0043280 INIST</idno>
<idno type="RBID">Pascal:01-0043280</idno>
<idno type="wicri:Area/Main/Corpus">011E25</idno>
<idno type="wicri:Area/Main/Repository">012784</idno>
<idno type="wicri:Area/Russie/Extraction">000B40</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0020-1685</idno>
<title level="j" type="abbreviated">Inorg. mater.</title>
<title level="j" type="main">Inorganic materials</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electrochemical etching</term>
<term>Electrolytes</term>
<term>Experimental study</term>
<term>Gallium arsenides</term>
<term>III-V semiconductors</term>
<term>IV characteristic</term>
<term>Indium phosphides</term>
<term>Morphology</term>
<term>Patterning</term>
<term>Roughness</term>
<term>SEM</term>
<term>Selective etching</term>
<term>Semiconductor materials</term>
<term>Surface treatments</term>
<term>Surfaces</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Traitement surface</term>
<term>Gravure électrochimique</term>
<term>Surface</term>
<term>Rugosité</term>
<term>Caractéristique courant tension</term>
<term>Matériau semiconducteur</term>
<term>Gravure sélective</term>
<term>Gallium arséniure</term>
<term>Semiconducteur III-V</term>
<term>Indium phosphure</term>
<term>Morphologie</term>
<term>Formation motif</term>
<term>SEM</term>
<term>Electrolyte</term>
<term>8165C</term>
<term>GaAs</term>
<term>As Ga</term>
<term>InP</term>
<term>In P</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">The electrochemical layer removal is widely used in the processing of semiconductors. The surface remaining after the layer removal is generally rough. Under certain conditions, this layer removal may be selective and results in the development of dislocation while, under other conditions, the selectivity decreases and the surface remains smooth after the electrochemical etching. In our present work, we compared the surface characteristics of GaAs and InP after electrochemical layer removal using different electrolytes. The investigation of the surface was carried out using scanning electron microscopy and α-step profiling equipment. In order to compare the surface roughness, we introduced a so-called roughness number. The surface morphology was investigated from the point of view of pattern formation.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0020-1685</s0>
</fA01>
<fA02 i1="01"><s0>INOMAF</s0>
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<fA03 i2="1"><s0>Inorg. mater.</s0>
</fA03>
<fA05><s2>36</s2>
</fA05>
<fA06><s2>10</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Study of polish material removal by electrochemical method on different compound semiconductors</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>NEMCSICS (A.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>DOBOS (L.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>DAVID (L.)</s1>
</fA11>
<fA14 i1="01"><s1>Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O.B. 49</s1>
<s2>1525 Budapest</s2>
<s3>HUN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Institute of Microelectronics and Technology, Kandó Kálmán Politechnic</s1>
<s3>RUS</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA20><s1>969-974</s1>
</fA20>
<fA21><s1>2000</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
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<s2>12674</s2>
<s5>354000092719670010</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2001 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>19 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>01-0043280</s0>
</fA47>
<fA60><s1>P</s1>
<s3>V</s3>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Inorganic materials</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fA99><s0>Trad. de Neorganicheskie Materialy, RU, 2000, 36, 10, 1159-1164</s0>
</fA99>
<fC01 i1="01" l="ENG"><s0>The electrochemical layer removal is widely used in the processing of semiconductors. The surface remaining after the layer removal is generally rough. Under certain conditions, this layer removal may be selective and results in the development of dislocation while, under other conditions, the selectivity decreases and the surface remains smooth after the electrochemical etching. In our present work, we compared the surface characteristics of GaAs and InP after electrochemical layer removal using different electrolytes. The investigation of the surface was carried out using scanning electron microscopy and α-step profiling equipment. In order to compare the surface roughness, we introduced a so-called roughness number. The surface morphology was investigated from the point of view of pattern formation.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A65</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Traitement surface</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Surface treatments</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Gravure électrochimique</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Electrochemical etching</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Grabado electroquímico</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Surface</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Surfaces</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Rugosité</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Roughness</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Caractéristique courant tension</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>IV characteristic</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Matériau semiconducteur</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Gravure sélective</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Selective etching</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Grabado selectivo</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>12</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>12</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Indium phosphure</s0>
<s2>NK</s2>
<s5>13</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Indium phosphides</s0>
<s2>NK</s2>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Morphologie</s0>
<s5>15</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Morphology</s0>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Formation motif</s0>
<s5>16</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Patterning</s0>
<s5>16</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Formacíon motivo</s0>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>SEM</s0>
<s5>17</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>SEM</s0>
<s5>17</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Electrolyte</s0>
<s5>18</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Electrolytes</s0>
<s5>18</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>8165C</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>GaAs</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>As Ga</s0>
<s4>INC</s4>
<s5>93</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>94</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>In P</s0>
<s4>INC</s4>
<s5>95</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>08</s5>
</fC07>
<fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>08</s5>
</fC07>
<fC07 i1="02" i2="3" l="FRE"><s0>Arséniure</s0>
<s2>NA</s2>
<s5>11</s5>
</fC07>
<fC07 i1="02" i2="3" l="ENG"><s0>Arsenides</s0>
<s2>NA</s2>
<s5>11</s5>
</fC07>
<fC07 i1="03" i2="3" l="FRE"><s0>Phosphure</s0>
<s2>NA</s2>
<s5>14</s5>
</fC07>
<fC07 i1="03" i2="3" l="ENG"><s0>Phosphides</s0>
<s2>NA</s2>
<s5>14</s5>
</fC07>
<fN21><s1>029</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Study of polish material removal by electrochemical method on different compound semiconductors

Study of polish material removal by electrochemical method on different compound semiconductors

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri